Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]. (1st June 2017)

Record Type:: Journal Article
Title:: Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]. (1st June 2017)
Main Title:: Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]
Authors:: Veloso, A.
Keersgieter, A. De
Matagne, P.
Horiguchi, N.
Collaert, N.
Abstract:
Is Part Of:: Materials science in semiconductor processing. Volume 63(2017)
Journal:: Materials science in semiconductor processing
Issue:: Volume 63(2017)
Issue Display:: Volume 63, Issue 2017 (2017)
Year:: 2017
Volume:: 63
Issue:: 2017
Issue Sort Value:: 2017-0063-2017-0000
Page Start:: 303
Page End:
Publication Date:: 2017-06-01
Subjects:: Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152
Journal URLs:: http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗
DOI:: 10.1016/j.mssp.2017.03.013 ↗
Languages:: English
ISSNs:: 1369-8001
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 597.xml