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7. Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer. Issue 8 (6th January 2023)

9. Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer. Issue 3 (12th November 2019)

10. Super‐high‐frequency‐band injection‐locked two‐divider oscillator using thin‐film bulk acoustic resonator. Issue 3 (10th January 2021)