Comparative study on nano‐scale III‐V double‐gate MOSFETs with various channel materials. Issue 11 (24th October 2013)

• Record Type: Journal Article
• Authors: Nishida, Akio; Hasegawa, Kei; Ohama, Ryoko; Fujikawa, Sachie; Hara, Shinsuke; Fujishiro, Hiroki I.; Yamaguchi, Hiroshi; Kumakura, Kazuhide
• Is Part Of: Physica status solidi. Volume 10:Issue 11(2013:Nov.)
• Page Start: 1413
• Page End: 1416
• Publication Date: 2013-10-24
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300264
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The current drivability of III‐V double gate MOSFETs with various channel materials are investigated by using quantum‐corrected Monte Carlo simulation. The InGaAs channel shows the largest electron injection velocity <italic>v</italic><sub>inj</sub>. However, the backward currents by alloy scattering (AL) in the channel and by non‐polar optical phonon scattering (NPOP) in the drain decrease the average electron velocity <italic>v</italic><sub>s</sub> from <italic>v</italic><sub>inj</sub> even at <italic>L</italic><sub>g</sub> of 10 nm. In the GaAs channel, in addition to the decrease in <italic>v</italic><sub>inj</sub> by the <italic>L</italic> valleys conduction, NPOP and polar optical phonon scattering (POP) cause the backward currents, which decrease <italic>v</italic><sub>s</sub> further from <italic>v</italic><sub>inj</sub>. The InP channel shows the smallest <italic>v</italic><sub>inj</sub>, however, the backward current by POP in the channel is small and that by NPOP in the drain is almost negligible. Therefore <italic>v</italic><sub>s</sub> is almost reaching <italic>v</italic><sub>inj</sub> at <italic>L</italic><sub>g</sub> of 10 nm. On the other hand, the electron density <italic>n</italic><sub>b</sub> is largest in the InP channel owing to the large <italic>C</italic><sub>gs</sub>. Eventually, the InP channel shows the largest <italic>I</italic><sub>ds</sub>. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</p> </abstract>