Growth process and morphology of three‐dimensional GaSb islands on Ga/Si(111). Issue 5 (29th January 2013)

• Record Type: Journal Article
• Authors: Hara, Shinsuke; Machida, Ryuto; Yoshiki, Keisuke; Irokawa, Katsumi; Miki, Hirofumi; Kawazu, Akira; Fujishiro, Hiroki I.; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 865
• Page End: 868
• Publication Date: 2013-01-29
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200597
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The growth process and morphology of three‐dimensional GaSb islands grown on a Ga/Si(111)‐√3 × √3 reconstructed surface have been studied by ultrahigh‐vacuum scanning tunneling microscopy and non‐contact atomic force microscopy. Faceted GaSb islands with a density of 10¹¹ cm⁻² are formed on Ga/Si(111) in multilayer growth at 350 °C. Hexagonal‐ and pyramid‐shaped islands are formed at 400 °C. Dome‐shaped islands, which are similar to the islands grown on clean Si(111), are only formed at 450 °C. The growth morphology of GaSb islands varies depending on the atomic species terminated on Si(111) and the growth temperature. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>