Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer. Issue 8 (6th January 2023)

• Record Type: Journal Article
• Authors: Endoh, Akira; Hatori, Koharu; Kishimoto, Naoyuki; Hiraoka, Mizuho; Kemmochi, Yuta; Endoh, Yuki; Osawa, Koki; Hayashi, Takuya; Machida, Ryuto; Watanabe, Issei; Yamashita, Yoshimi; Hara, Shinsuke; Kasamatsu, Akifumi; Fujishiro, Hiroki I.
• Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor.
• Is Part Of: Physica status solidi. Volume 220:Issue 8(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-01-06
• Subjects: conduction band discontinuity -- electron mobility -- high electron mobility transistors -- molecular beam epitaxy -- sheet electron density -- strain -- threading dislocation density; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.202200529
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : GaInSb is one of the attractive Sb‐based channel materials for high electron mobility transistors (HEMTs) that can operate in the terahertz band. The effect of strain in the channel on the electron transport properties of Ga1− x In x Sb channel HEMT structures ( x = 0.60, 0.78, 0.85, 0.90, and 0.94) with the strained‐Al0.40 In0.60 Sb/Al0.25 In0.75 Sb stepped buffer is investigated. The strain in the Ga1− x In x Sb channel layer is determined by the lattice constant of Al0.25 In0.75 Sb lower buffer layer. The electron mobility ( μ ) shows the maximum value of 15 100 cm 2 V −1 s −1 at x = 0.78 (unstrained), which has the minimum threading dislocation density (TDD). The value for sheet electron density ( N s ) increases with decreasing x, and saturates at about 2.1 × 10 12 cm −2 when unstrained or tensile strained. The minimum sheet resistance ( R s ) is 202 Ω/□ for the unstrained Ga0.22 In0.78 Sb channel. Abstract : Electron transport properties of strained Ga1− x In x Sb high electron mobility transistor (HEMT) structures with strained‐Al0.40 In0.60 Sb/Al0.25 In0.75 Sb stepped buffer layer are investigated. The strain of Ga1− x In x Sb is determined by the Al0.25 In0.75 Sb lower buffer. Electron mobility shows the maximum value of 15 100 cm 2 V −1 s −1 at x = 0.78 (unstrained channel). Sheet electron density increases with decreasing x, and saturates at about 2.1 × 10 12 cm −2 when unstrained or tensile strained.