Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer. Issue 3 (12th November 2019)

• Record Type: Journal Article
• Authors: Hiraoka, Mizuho; Endoh, Yuki; Osawa, Koki; Kishimoto, Naoyuki; Hayashi, Takuya; Machida, Ryuto; Watanabe, Issei; Yamashita, Yoshimi; Hara, Shinsuke; Gotow, Takahiro; Kasamatsu, Akifumi; Endoh, Akira; Fujishiro, Hiroki I.
• Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-12
• Subjects: GaInSb -- high electron mobility transistors -- InSb -- quantum well -- strained stepped buffer; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900516
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Unstrained Ga1– x In x Sb quantum well (QW) channel using strained‐Al0.40 In0.60 Sb/Al1– y In y Sb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1– x In x Sb QW is lattice‐matched to the Al1– y In y Sb lower buffer layer. Sheet electron density ( N s ) of Ga1– x In x Sb QW is about twice that of InSb one. Electron mobility ( μ ) increases with increasing In content x of Ga1– x In x Sb. Unstrained Ga0.22 In0.78 Sb QW channel using strained‐Al0.40 In0.60 Sb/Al0.25 In0.75 Sb stepped buffer has N s of 2.05 × 10 12 cm −2 and μ of 15 500 cm 2 V −1 s −1 . Compared with the InSb QW channel, N s increases by a factor of 193% and μ decreases to 87%. Consequently, the sheet resistance decreases to 59%. These results indicate that the unstrained Ga1– x In x Sb QW channel using strained‐Al0.40 In0.60 Sb/Al1– y In y Sb stepped buffer is effective to improve the electron transport properties. Abstract : Unstrained Ga1– x In x Sb quantum well (QW) channel using strained‐Al0.40 In0.60 Sb/Al1– y In y Sb stepped buffer layer is investigated. The Ga1– x In x Sb QW is lattice‐matched to the Al1– y In y Sb lower buffer layer. The Te‐δ‐doped Al0.40 In0.60 Sb barrier layer is grown on the Ga1– x In x Sb QW. Sheet electron density ( N s ) of Ga1– x In x Sb QW is about twice that of InSb one. Thus, increasing N s while keeping relatively high electron mobility is successful.