1. Crucial influential factor on background electron concentration in semi-polar (112¯2) plane AlGaN epi-layers. (January 2019) Authors: Yang, Gang; Zhang, Xiong; Wu, Zili; Zhao, Jianguo; Nasir, Abbas; Chen, Shuai; Fan, Aijie; Cui, Yiping Journal: Superlattices and microstructures Issue: Volume 125(2019) Page Start: 338 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of V/Ⅲ ratio on structural, optical, and electrical properties of semi-polar high Al-content Si-doped n-AlGaN epi-layers. (15th November 2022) Authors: Shen, Yang; Zhang, Xiong; Fan, Aijie; Chen, Bin; Tian, Yong; Luo, Xuguang; Lyu, Jiadong; Lai, Mu-Jen; Hu, Guohua; Cui, Yiping Journal: Materials science in semiconductor processing Issue: Volume 151(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effects of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer. (September 2020) Authors: Fan, Aijie; Zhang, Xiong; Chen, Shuai; Li, Cheng; Lu, Liang; Zhuang, Zhe; Lyu, Jiadong; Hu, Guohua; Cui, Yiping Journal: Superlattices and microstructures Issue: Volume 145(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Enhanced hole concentration and improved surface morphology for nonpolar a-plane p-type AlGaN/GaN superlattices grown with indium-surfactant. (June 2019) Authors: Fan, Aijie; Zhang, Xiong; Wu, Zili; Zhao, Jianguo; Chen, Shuai; Chen, Hu; Nasir, Abbas; Cui, Yiping Journal: Superlattices and microstructures Issue: Volume 130(2019) Page Start: 396 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices. (January 2019) Authors: Wu, Zili; Zhang, Xiong; Zhao, Jianguo; Fan, Aijie; Chen, Hu; Chen, Shuai; Abbas, Nasir; Cui, Yiping Journal: Superlattices and microstructures Issue: Volume 125(2019) Page Start: 310 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates. (May 2021) Authors: Rao, Lifeng; Zhang, Xiong; Fan, Aijie; Chen, Shuai; Li, Cheng; He, Jiaqi; Zhuang, Zhe; Lyu, Jiadong; Hu, Guohua; Cui, Yiping Journal: Materials science in semiconductor processing Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High hole concentration in nonpolar a-plane p-AlGaN films with Mg-delta doping technique. (September 2017) Authors: Wu, Zili; Zhang, Xiong; Dai, Qian; Zhao, Jianguo; Fan, Aijie; Wang, Shuchang; Cui, Yiping Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 880 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improved surface morphology and crystalline quality of semi-polar (112‾2) AlN epilayer with dual moderate-temperature-grown AlN interlayers. (15th June 2022) Authors: Luo, Xuguang; Zhang, Xiong; Chen, Bin; Shen, Yang; Tian, Yong; Fan, Aijie; Chen, Shuai; Qian, Yingda; Zhuang, Zhe; Hu, Guohua Journal: Materials science in semiconductor processing Issue: Volume 144(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Properties of Si-doped a-plane AlGaN layers. (15th November 2020) Authors: Chen, Hu; Zhang, Xiong; Chen, Shuai; Fan, Aijie; Li, Cheng; Lu, Liang; Rao, Lifeng; Lyu, Jiadong; Hu, Guohua; Cui, Yiping Journal: Materials science in semiconductor processing Issue: Volume 119(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology. (February 2022) Authors: Tian, Yong; Zhang, Xiong; Fan, Aijie; Shen, Yang; Chen, Shuai; Chen, Bin; Luo, Xuguang; Zhuang, Zhe; Lyu, Jiadong; Hu, Guohua; Cui, Yiping Journal: Materials science in semiconductor processing Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗