Enhanced structural and electrical properties of nonpolar a-plane p-type AlGaN/GaN superlattices. (January 2019)

• Record Type: Journal Article
• Authors: Wu, Zili; Zhang, Xiong; Zhao, Jianguo; Fan, Aijie; Chen, Hu; Chen, Shuai; Abbas, Nasir; Cui, Yiping
• Is Part Of: Superlattices and microstructures. Volume 125(2019)
• Page Start: 310
• Page End: 314
• Publication Date: 2019-01
• Subjects: Epitaxial growth -- Electrical properties -- p-AlGaN/GaN superlattice -- Nonpolar; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.11.020
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The nonpolar a -plane p-Al x Ga1- x N/GaN superlattices (SLs) were successfully grown with metal organic chemical vapor deposition technology. The surface morphology, carrier concentration, layer thickness, and Al composition for the nonpolar a -plane p-Al x Ga1- x N/GaN SLs were characterized by various kinds of technical tools. It was demonstrated that the thickness of the Al x Ga1- x N and GaN layers in SLs was calculated to be 12 and 14.5 nm, respectively and the Al composition of the Al x Ga1- x N layers in SLs was around 30%. Meanwhile, the results reveal that the surface morphology and carrier concentration of the nonpolar p-SLs could be improved remarkably with the Al composition-graded AlGaN buffer layer and the Mg-δ-doping process. Consequently, a root mean square value of 0.6 nm and a hole concentration of 4.2 × 10 17 cm −3 were achieved. Highlights: The nonpolar Mg-doped a -plane p-AlGaN/GaN superlattices were successfully grown. The Mg-delta-doping technique was employed in this study. The Al composition-graded AlGaN buffer layer was used in this study. A root mean square as small as 0.6 nm was obtained. A hole concentration as high as 4.2 × 10 17 cm −3 was achieved.