Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates. (May 2021)

• Record Type: Journal Article
• Authors: Rao, Lifeng; Zhang, Xiong; Fan, Aijie; Chen, Shuai; Li, Cheng; He, Jiaqi; Zhuang, Zhe; Lyu, Jiadong; Hu, Guohua; Cui, Yiping
• Is Part Of: Materials science in semiconductor processing. Volume 126(2021)
• Publication Date: 2021-05
• Subjects: Semi-polar (11–22) plane -- AlInGaN quaternary alloy -- Epitaxial growth -- Surface morphology -- Crystalline quality -- Optical property -- Phase separation; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.105660
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The semi-polar (11–22) plane AlInGaN quaternary alloys were grown successfully on the m -plane (10-10) sapphire substrates with metalorganic chemical vapor deposition technology. Optical microscope, atomic force microscope, energy-dispersive X-ray spectroscopy, X-ray diffraction, and room temperature photoluminescence spectroscopy were used to study the effects of V/III ratio and trimethyl-indium flow rate on the characteristics of the grown semi-polar (11–22) plane AlInGaN quaternary alloys. It was found that the In composition of the semi-polar (11–22) plane AlInGaN quaternary alloys decreased as the V/III ratio increased. It was also revealed that the surface morphology, crystalline quality, and the optical property could be improved, and the phase separation in the quaternary alloy could be suppressed significantly by optimizing the V/III ratio and the trimethyl-indium flow rates.