Properties of Si-doped a-plane AlGaN layers. (15th November 2020)

• Record Type: Journal Article
• Authors: Chen, Hu; Zhang, Xiong; Chen, Shuai; Fan, Aijie; Li, Cheng; Lu, Liang; Rao, Lifeng; Lyu, Jiadong; Hu, Guohua; Cui, Yiping
• Is Part Of: Materials science in semiconductor processing. Volume 119(2020)
• Publication Date: 2020-11-15
• Subjects: Non-polar a-plane n-AlGaN -- SiH4 mole flow Rate -- Electron concentration -- Electron mobility; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.105270
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The non-polar a -plane (11 2 ¯ 0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r -plane (1 1 ¯ 02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction, room temperature photoluminescence spectrum, and Hall effect measurement were used to examine the influence of Si-doping on the crystalline quality, and the optical and electrical characteristics of the non-polar a -plane n-AlGaN epi-layer, respectively. The characterization results indicate that the electron concentration (EC), the electron mobility, and the crystalline quality for the non-polar a -plane n-AlGaN epi-layers could be improved significantly by optimizing the epitaxial growth conditions, especially the mole flow rate of SiH4 in the Si-doping process. In fact, at a SiH4 mole flow rate of 10.2 nmol/min, an EC as high as 1.25 × 10 18 cm −3 and an electron mobility up to 3.86 cm 2 /V were achieved with the non-polar n-AlGaN epi-layer sample with the Al content of 41%. Highlights: Non-polar a -plane n-AlGAN layers with the Al content of 41% were grown. An EC as high as 1.25 × 10 18 cm −3 and an electron mobility up to 4.54 cm 2 /V were achieved for non-polar n-AlGaN layers. The properties of the non-polar a -plane n-AlGaN epi-layers could be improved by optimizing the Si-doping process.