1. A new low specific on-resistance Hk-LDMOS with N-poly diode. (January 2017) Authors: Deng, Jing; Huang, Mingmin; Cheng, Junji; Lyu, Xinjiang; Chen, Xingbi Journal: Superlattices and microstructures Issue: Volume 101(2017) Page Start: 180 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. An improved SOI trench LDMOST with double vertical high-k insulator pillars *Project supported by the National Natural Science Foundation of China (Nos. 51237001, 51607026) and the Fundamental Research Funds for the Central Universities (No. ZYGX2016J048). (September 2018) Authors: Li, Huan; Huang, Haimeng; Chen, Xingbi Journal: Journal of semiconductors Issue: Volume 39:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low on‐state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode. Issue 24 (1st November 2017) Authors: Li, Ping; Cheng, Junji; Chen, Xingbi Journal: Electronics letters Issue: Volume 53:Issue 24(2017) Page Start: 1608 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Novel technique for lateral high‐voltage totem‐pole power devices. Issue 9 (1st September 2014) Authors: Kong, Moufu; Chen, Xingbi Journal: IET power electronics Issue: Volume 7:Issue 9(2014) Page Start: 2396 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region. (5th September 2019) Authors: Zhang, Bingke; Kong, Moufu; Yi, Bo; Hu, Huan; Chen, Weizhen; Chen, Xingbi Journal: Semiconductor science and technology Issue: Volume 34:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Snapback‐free reverse‐conducting IGBT with low turnoff loss. Issue 9 (1st April 2014) Authors: Yi, Bo; Lin, Zhi; Chen, Xingbi Journal: Electronics letters Issue: Volume 50:Issue 9(2014) Page Start: 703 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Theory of an improved vertical power MOSFET using high-k insulator. (December 2015) Authors: Huang, Mingmin; Chen, Xingbi Journal: Superlattices and microstructures Issue: Volume 88(2015) Page Start: 244 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Vertical power Schottky barrier diodes using a high-k insulator. (7th September 2015) Authors: Huang, Mingmin; Chen, Xingbi Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗