Snapback‐free reverse‐conducting IGBT with low turnoff loss. Issue 9 (1st April 2014)

• Record Type: Journal Article
• Authors: Yi, Bo; Lin, Zhi; Chen, Xingbi
• Is Part Of: Electronics letters. Volume 50:Issue 9(2014)
• Page Start: 703
• Page End: 705
• Publication Date: 2014-04-01
• Subjects: insulated gate bipolar transistors -- semiconductor diodes -- thyristors -- numerical analysis; reverse‐conducting insulated gate bipolar transistor -- snapback‐free RC‐IGBT -- PNP transistor -- NPN transistor -- collector‐base short‐circuited configuration -- bidirectional conduction capability -- diode mode -- thyristor mode -- two‐dimensional numerical simulation; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.0169
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A novel structure of the reverse‐conducting insulated gate bipolar transistor (RC‐IGBT) is proposed. The structure is connected anti‐parallel with a PNP and an NPN transistor, which are in a collector‐base short‐circuited configuration. Bidirectional conduction capability with no snapback can be obtained by this structure and the turnoff speed can be much improved. The structure can work in two different modes in a reverse‐conducting state: a diode mode and a thyristor mode. Two‐dimensional numerical simulation results show that the novel RC‐IGBT reduces the turnoff loss ( E off ) by 26.4 and 37.7% for the thyristor mode and the diode mode, respectively, and has no current non‐uniformity compared with the conventional RC‐IGBT.