Novel technique for lateral high‐voltage totem‐pole power devices. Issue 9 (1st September 2014)

• Record Type: Journal Article
• Authors: Kong, Moufu; Chen, Xingbi
• Is Part Of: IET power electronics. Volume 7:Issue 9(2014)
• Page Start: 2396
• Page End: 2402
• Publication Date: 2014-09-01
• Subjects: power integrated circuits -- low‐power electronics -- power MOSFET; lateral high‐voltage totem‐pole power devices -- high‐voltage integrated circuit -- low control voltage -- low‐voltage tub circuit -- small low‐side device -- low‐voltage ground circuit -- high‐voltage level‐shifting circuit -- totem‐pole high‐voltage IC -- low‐voltage power supply -- numerical simulation -- LDMOS devices; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2013.0561
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : A novel technique and related structure for a high‐voltage integrated circuit (IC) with totem‐pole high‐voltage devices are proposed. In this technique, a low control voltage with respect to the tub is used to drive the high‐side device in the totem pole through a low‐voltage tub circuit, as well as through very small low‐side device to drive a low‐voltage ground circuit, which in turn drives the low‐side device in the totem pole. Therefore, the high‐voltage level‐shifting circuit can be replaced by the tub circuit which takes only a very small area and has no parasitic effects in comparison with that in the conventional totem‐pole high‐voltage IC. The structure of low‐voltage power supplies for low‐voltage ICs is also proposed. The results of numerical simulation verify the applicability of the proposed structure.