Vertical power Schottky barrier diodes using a high-k insulator. (7th September 2015)

• Record Type: Journal Article
• Authors: Huang, Mingmin; Chen, Xingbi
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Publication Date: 2015-09-07
• Subjects: SBD -- high-k (Hk) -- accumulation layer -- leakage current -- reverse recovery; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105021
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Several types of vertical power Schottky barrier diodes (SBDs) using a high- k (H k ) insulator, which have a low specific on-resistance ( R on ) close to that of the superjunction (SJ) SBD with the same breakdown voltage (BV), are studied. By introducing an N + -poly-region in the H k insulator at the anode side, the reverse leakage current of the H k -SBD can be largely reduced without increasing the forward voltage drop. Simulation results based on Sentaurus show that, by using the N + -poly-region, the reverse leakage current of the 400 V H k -SBD can be lowered by more than 40 times with R on (=3.13 mΩ · cm 2 ) equaling about eight times smaller than that of the conventional SBD having almost the same BV. It is also found that the reverse recovery behavior of the H k -SBDs is much softer than that of the SJ-SBD.