1. 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Issue 3 (1st January 2013) Authors: Dong, Zhihua; Tan, Shuxin; Cai, Yong; Chen, Hongwei; Liu, Shenghou; Xu, Jicheng; Xue, Lu; Yu, Guohao; Wang, Yue; Zhao, Desheng; Hou, Keyu; Chen, Kevin J.; Zhang, Baoshun Journal: Electronics letters Issue: Volume 49:Issue 3(2013) Page Start: 221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor. (4th October 2019) Authors: Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Lei, Jiacheng; Song, Wenjie; Zhang, Long; Hua, Mengyuan; Chen, Kevin J. Journal: Applied physics express Issue: Volume 12:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface. (12th July 2018) Authors: Zhang, Zhaofu; Hua, Mengyuan; He, Jiabei; Tang, Gaofei; Qian, Qingkai; Chen, Kevin J. Journal: Applied physics express Issue: Volume 11:Number 8(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film. Issue 3 (5th March 2014) Authors: Liu, Cheng; Liu, Shenghou; Huang, Sen; Li, Baikui; Chen, Kevin J. Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 953 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Assessment of osteoarthritis functional outcomes and intra‐articular injection volume in the rat anterior cruciate ligament transection model. Issue 9 (7th January 2022) Authors: Wang, Yuyan; Wagner, Emma S.; Yu, Danqiao; Chen, Kevin J.; Keel, Taidhgin J.; Pownder, Sarah L.; Koff, Matthew F.; Cheetham, Jonathan; Samaroo, Kirk J.; Reesink, Heidi L. Journal: Journal of orthopaedic research Issue: Volume 40:Issue 9(2022) Page Start: 2004 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric. Issue 10 (10th January 2018) Authors: Hua, Mengyuan; Qian, Qingkai; Wei, Jin; Zhang, Zhaofu; Tang, Gaofei; Chen, Kevin J. Other Names: Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 10(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs. Issue 11 (18th October 2013) Authors: Lu, Yunyou; Yang, Shu; Jiang, Qimeng; Tang, Zhikai; Li, Baikui; Chen, Kevin J.; Yamaguchi, Hiroshi; Kumakura, Kazuhide Journal: Physica status solidi Issue: Volume 10:Issue 11(2013:Nov.) Page Start: 1397 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Degradation of transient OFF‐state leakage current in AlGaN/GaN HEMTs induced by ON‐state gate overdrive. Issue 3 (20th February 2014) Authors: Li, Baikui; Jiang, Qimeng; Liu, Shenghou; Liu, Cheng; Chen, Kevin J. Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 928 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3. (January 2018) Authors: Kim, Kwangeun; Hua, Mengyuan; Liu, Dong; Kim, Jisoo; Chen, Kevin J.; Ma, Zhenqiang Journal: Nano energy Issue: Volume 43(2018) Page Start: 259 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023). Issue 12 (23rd March 2023) Authors: Chen, Junting; Zhao, Junlei; Feng, Sirui; Zhang, Li; Cheng, Yan; Liao, Hang; Zheng, Zheyang; Chen, Xiaolong; Gao, Zhen; Chen, Kevin J.; Hua, Mengyuan Journal: Advanced materials Issue: Volume 35:Issue 12(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗