A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor. (4th October 2019)

• Record Type: Journal Article
• Authors: Wang, Yuru; Lyu, Gang; Wei, Jin; Zheng, Zheyang; Lei, Jiacheng; Song, Wenjie; Zhang, Long; Hua, Mengyuan; Chen, Kevin J.
• Is Part Of: Applied physics express. Volume 12:Number 10(2019)
• Publication Date: 2019-10-04
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab4741
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A 1200-V/100-mΩ GaN/SiC cascode device is demonstrated with small capacitances for fast switching speed, no dynamic ON-resistance ( R ON ) degradation, and stable high-temperature threshold voltage ( V TH ). To identify its safe operation in the OFF-state with a high drain bias, the middle point voltage ( V M ) between the GaN and SiC devices is investigated under static and dynamic modes. An adequately low V M is achieved at both static and dynamic states. A voltage distribution process found that the OFF-state V M is capacitance-dependent during the turn-off transient and turns to be resistance-dependent to match the leakage current with a steady drain bias.