1. (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI). (8th September 2015) Authors: Triyoso, Dina; Carter, Rick; Kluth, Jon; Luning, Scott; Child, Amy; Wahl, Jeremy; Mulfinger, Bob; Punchihewa, Kasun; Kumar, Anil; Kang, Laegu; Sporer, Ryan; Chen, Xiaobo; Straub, Sherry; Bohra, Girish; Patil, Suraj; Zhang, Xing; Chen, Alex; Togo, Mitsuhiro; Pal, Rohit Journal: ECS transactions Issue: Volume 69:Number 5(2015) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) VLSI-CMOS Device Technology Scaling Landscape Based on Fully-Depleted SOI and 3D-FinFET Technologies for the Internet of Everything Era. (26th April 2017) Authors: Hoentschel, Jan; Carter, Rick; Rice, Bryan Journal: ECS transactions Issue: Volume 77:Number 5(2017) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications Technologies 22FDX® pour les Applications très basse puissance IoT, RF et Ondes Millimétriques. (2019) Authors: Hoentschel, Jan; Pirro, Luca; Carter, Rick; Horstmann, Manfred Journal: Composants nanoélectroniques = Issue: Volume 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Buried SiGe as a performance booster in n-channel FDSOI MOSFETs. (December 2019) Authors: Clifton, Paul; Goebel, Andreas; Mulfinger, Robert; Child, Amy; Straub, Sherry; Sporer, Ryan; Carter, Rick; Kluth, Jon; Schaeffer, Jamie; Nguyen, Bich-Yen; Chabanne, Guillaume; Daval, Nicolas; Schwarzenbach, Walter; Hemkar, Manish; Chu, Schubert; Moffatt, Steve Journal: Solid-state electronics Issue: Volume 162(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Dual-curvature cavity for improved p-type FinFET performance. (13th July 2018) Authors: Peng, Jianwei; Lo, Hsien-Ching; Zhao, Pei; He, Xiaoli; Hu, Yue; Shi, Yongjun; Qi, Yi; Vinslava, Alina; Shen, Yanping; Hong, Wei; Choi, Dongil; Adams, Charlotte; Carter, Rick; Lee, Jae Gon; Hu, Owen; Samavedam, Srikanth Journal: Semiconductor science and technology Issue: Volume 33:Number 8(2018:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low Power FDSOI Technology and Devices for RF Applications. (18th August 2016) Authors: Schwan, Christoph; Chew, Kok Wai; Feudel, Thomas; Kammler, Thorsten; Faul, Juergen; Kang, Laegu; Taylor, Richard; Huschka, Andreas; Kluth, Jon; Carter, Rick; McKay, Thomas; Nowak, Edward; Watts, Josef; Harame, David L. Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Oxygen for end-of-life lung cancer care: managing dyspnea and hypoxemia. (October 2013) Authors: Tiep, Brian; Carter, Rick; Zachariah, Finly; Williams, Anna C; Horak, David; Barnett, Mary; Dunham, Rachel Journal: Expert review of respiratory medicine Issue: Volume 7:Number 5(2013) Page Start: 479 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Source/drain eSiGe engineering for FinFET technology. (17th August 2017) Authors: Peng, Jianwei; Qi, Yi; Lo, Hsien-Ching; Zhao, Pei; Yong, Chloe; Yan, Jianghu; Dou, Xinyuan; Zhan, Hui; Shen, Yanping; Regonda, Suresh; Hu, Owen; Yu, Hong; Joshi, Manoj; Adams, Charlotte; Carter, Rick; Samavedam, Srikanth Journal: Semiconductor science and technology Issue: Volume 32:Number 9(2017:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗