Dual-curvature cavity for improved p-type FinFET performance. (13th July 2018)

• Record Type: Journal Article
• Authors: Peng, Jianwei; Lo, Hsien-Ching; Zhao, Pei; He, Xiaoli; Hu, Yue; Shi, Yongjun; Qi, Yi; Vinslava, Alina; Shen, Yanping; Hong, Wei; Choi, Dongil; Adams, Charlotte; Carter, Rick; Lee, Jae Gon; Hu, Owen; Samavedam, Srikanth
• Is Part Of: Semiconductor science and technology. Volume 33:Number 8(2018:Aug.)
• Publication Date: 2018-07-13
• Subjects: dual-curvature cavity -- FinFET -- eSiGe; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aacff3
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This work presents a new dual-curvature cavity that enables p-type transistor electrical I on – I off performance improvement in FinFET technology. A dual-curvature cavity is a conventional ball-shaped cavity with an additional smaller cavity at the bottom formed through further pushing down the Fin and spacers in the gate canyon. This new cavity design benefits on-state current ( I on ) through enabling larger SiGe source/drain with deeper cavity while it minimizes the penalty of drain leakage ( I off ) increase though keeping the additional cavity away from the channel. In this work, devices with dual-curvature cavity demonstrated 3%–6% I on – I off performance improvement for different threshold voltage flavors in a mature 14 nm production line.