Author/Creator: Baishya, Srimanta - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Baishya, Srimanta

1. 3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications. Issue 2 (4th March 2022)

Authors:: Baidya, Achinta; Lenka, Trupti R.; Baishya, Srimanta
Journal:: IETE journal of research
Issue:: Volume 68:Issue 2(2022)
Page Start:: 1342
Record Type:: Journal Article
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2. A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam. (December 2015)

Authors:: Guha, Koushik; Kumar, Mithlesh; Agarwal, Saurabh; Baishya, Srimanta
Journal:: Solid-state electronics
Issue:: Volume 114(2015)
Page Start:: 35
Record Type:: Journal Article
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3. A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam. (December 2015)

Authors:: Guha, Koushik; Kumar, Mithlesh; Agarwal, Saurabh; Baishya, Srimanta
Journal:: Solid-state electronics
Issue:: Volume 114(2015)
Page Start:: 35
Record Type:: Journal Article
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4. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices. (July 2016)

Authors:: Maity, Niladri Pratap; Maity, Reshmi; Thapa, R.K.; Baishya, Srimanta
Journal:: Superlattices and microstructures
Issue:: Volume 95(2016)
Page Start:: 24
Record Type:: Journal Article
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5. Analysis of fringing capacitance effect on the performance of micro‐electromechanical‐system‐based micromachined ultrasonic air transducer. (1st June 2018)

Authors:: Maity, Reshmi; Maity, Niladri P.; Guha, Koushik; Baishya, Srimanta
Journal:: Micro & nano letters
Issue:: Volume 13:Number 6(2018)
Page Start:: 872
Record Type:: Journal Article
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6. Analysis of GaN nanoscale FinFET for low power circuit applications. (1st April 2018)

Authors:: Das, Rajashree; Baishya, Srimanta
Journal:: Micro & nano letters
Issue:: Volume 13:Number 4(2018)
Page Start:: 568
Record Type:: Journal Article
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7. Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET. Issue 4 (9th February 2021)

Authors:: Saha, Rajesh; Panda, Deepak Kumar; Goswami, Rupam; Bhowmick, Brinda; Baishya, Srimanta
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 31:Issue 4(2021)
Page Start:: n/a
Record Type:: Journal Article
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8. Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET. (May 2018)

Authors:: Das, Rajashree; Baishya, Srimanta
Journal:: Microelectronics journal
Issue:: Volume 75(2018)
Page Start:: 153
Record Type:: Journal Article
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9. Analytical threshold voltage and subthreshold swing model for TMG FinFET. Issue 4 (3rd April 2019)

Authors:: Saha, Rajesh; Bhowmick, Brinda; Baishya, Srimanta
Journal:: International journal of electronics
Issue:: Volume 106:Issue 4(2019)
Page Start:: 553
Record Type:: Journal Article
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10. Comprehensive investigation of radiofrequency/analog parameters in a ferroelectric tunnel field-effect transistor. (21st January 2022)

Authors:: Saha, Rajesh; Goswami, Rupam; Bhowmick, Brinda; Baishya, Srimanta
Journal:: Semiconductor science and technology
Issue:: Volume 37:Number 3(2022)
Page Start:
Record Type:: Journal Article
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