A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam. (December 2015)
- Record Type:
- Journal Article
- Title:
- A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam. (December 2015)
- Main Title:
- A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam
- Authors:
- Guha, Koushik
Kumar, Mithlesh
Agarwal, Saurabh
Baishya, Srimanta - Abstract:
- Highlights: Capacitance in MEMS shunt perforated switch including fringing field through holes. Capacitance in up-state and down-state is 25% and 2% respectively of the switch. Error of model value is −4.45% in up-state and −5.78% in down-state condition. Modification of three benchmark models for parallel plate capacitance. Model validity limits range. Abstract: This paper deals with the approach to accurately model the capacitance of non-uniform meander based RF MEMS shunt switch with perforated structure. Here the general analytical model of capacitance is proposed for both up state and down state condition of the switch. The model also accounts for fringing capacitance due to beam thickness and etched holes on the beam. Calculated results are validated with the simulated results of full 3D FEM solver Coventorware in both the conditions of the switch. Variation of Up-state and Down-state capacitances with different dielectric thicknesses and voltages are plotted and error of analytical value is estimated and analyzed. Three benchmark models of parallel plate capacitance are modified for MEMS switch operation and their results are compared with the proposed model. Percentage contribution of fringing capacitance in up-state and down-state is approx. 25% and 2%, respectively, of the total capacitance. The model shows good accuracy with the mean error of −4.45% in up-state and −5.78% in down-state condition for a wide range of parameter variations and −2.13% for ligamentHighlights: Capacitance in MEMS shunt perforated switch including fringing field through holes. Capacitance in up-state and down-state is 25% and 2% respectively of the switch. Error of model value is −4.45% in up-state and −5.78% in down-state condition. Modification of three benchmark models for parallel plate capacitance. Model validity limits range. Abstract: This paper deals with the approach to accurately model the capacitance of non-uniform meander based RF MEMS shunt switch with perforated structure. Here the general analytical model of capacitance is proposed for both up state and down state condition of the switch. The model also accounts for fringing capacitance due to beam thickness and etched holes on the beam. Calculated results are validated with the simulated results of full 3D FEM solver Coventorware in both the conditions of the switch. Variation of Up-state and Down-state capacitances with different dielectric thicknesses and voltages are plotted and error of analytical value is estimated and analyzed. Three benchmark models of parallel plate capacitance are modified for MEMS switch operation and their results are compared with the proposed model. Percentage contribution of fringing capacitance in up-state and down-state is approx. 25% and 2%, respectively, of the total capacitance. The model shows good accuracy with the mean error of −4.45% in up-state and −5.78% in down-state condition for a wide range of parameter variations and −2.13% for ligament efficiency of μ = 0.3. … (more)
- Is Part Of:
- Solid-state electronics. Volume 114(2015)
- Journal:
- Solid-state electronics
- Issue:
- Volume 114(2015)
- Issue Display:
- Volume 114, Issue 2015 (2015)
- Year:
- 2015
- Volume:
- 114
- Issue:
- 2015
- Issue Sort Value:
- 2015-0114-2015-0000
- Page Start:
- 35
- Page End:
- 42
- Publication Date:
- 2015-12
- Subjects:
- Up-state capacitance -- Down-state capacitance -- Fringing field capacitance -- Ligament efficiency -- Perforated switch -- RF MEMS
Semiconductors -- Periodicals
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00381101 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.sse.2015.07.008 ↗
- Languages:
- English
- ISSNs:
- 0038-1101
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8327.385000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 7799.xml