1. Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate. (November 2017) Authors: Majumdar, Shubhankar; Bag, Ankush; Biswas, Dhrubes Journal: Microelectronics and reliability Issue: Volume 78(2017) Page Start: 389 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis. (January 2018) Authors: Chakraborty, Apurba; Ghosh, Saptarsi; Mukhopadhyay, Partha; Das, Subhashis; Bag, Ankush; Biswas, Dhrubes Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique. (5th February 2018) Authors: Chakraborty, Apurba; Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Biswas, Dhrubes Journal: Semiconductor science and technology Issue: Volume 33:Number 3(2018:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics. Issue 29 (4th July 2018) Authors: Bag, Ankush; Das, Subhashis; Kumar, Rahul; Biswas, Dhrubes Journal: CrystEngComm Issue: Volume 20:Issue 29(2018) Page Start: 4151 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current. Issue 1 (2nd January 2016) Authors: Bag, Ankush; Das, Palash; Ghosh, Saptarsi; Mukhopadhyay, Partha; Dinara, Syed Mukulika; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes Journal: IETE technical review Issue: Volume 33:Issue 1(2016) Page Start: 7 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Implementation of veriloga GaN HEMT model to design RF switch. Issue 7 (July 2015) Authors: Majumdar, Shubhankar; Bag, Ankush; Biswas, Dhrubes Journal: Microwave and optical technology letters Issue: Volume 57:Issue 7(2015:Jul.) Page Start: 1765 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon. (February 2015) Authors: Mukhopadhyay, Partha; Banerjee, Utsav; Bag, Ankush; Ghosh, Saptarsi; Biswas, Dhrubes Journal: Solid-state electronics Issue: Volume 104(2015) Page Start: 101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Interface Engineering of CZTS/TiO2 Heterojunction Using Wide‐Bandgap Ga2O3 Passivation Interlayer for Efficient Charge Extraction. Issue 14 (22nd July 2022) Authors: Nisika, ; Ghosh, Anupam; Kaur, Damanpreet; Kaur, Kulwinder; Yadav, Manoj K.; Bag, Ankush; Kumar, Mukesh Journal: Physica status solidi Issue: Volume 219:Issue 14(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Interface Engineering of CZTS/TiO2 Heterojunction Using Wide‐Bandgap Ga2O3 Passivation Interlayer for Efficient Charge Extraction. Issue 14 (22nd May 2022) Authors: Nisika, ; Ghosh, Anupam; Kaur, Damanpreet; Kaur, Kulwinder; Yadav, Manoj K.; Bag, Ankush; Kumar, Mukesh Journal: Physica status solidi Issue: Volume 219:Issue 14(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Observation and analysis of kink effect during drain current inception of GaN HEMT. (August 2018) Authors: Bag, Ankush; Das, Subhashis; Mukhopadhyay, Partha; Biswas, Dhrubes Journal: Superlattices and microstructures Issue: Volume 120(2018) Page Start: 101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗