Implementation of veriloga GaN HEMT model to design RF switch. Issue 7 (July 2015)

• Record Type: Journal Article
• Authors: Majumdar, Shubhankar; Bag, Ankush; Biswas, Dhrubes
• Is Part Of: Microwave and optical technology letters. Volume 57:Issue 7(2015:Jul.)
• Page Start: 1765
• Page End: 1768
• Publication Date: 2015-07
• Subjects: Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.29152
• Languages: English
• ISSNs: 0895-2477

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look‐up‐table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be −40 dB to −35 dB and −0.5 dB to −2.5 dB, respectively in the 0.5–2.5 GHz frequency range. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765–1768, 2015</p> </abstract>