Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique. (5th February 2018)

• Record Type: Journal Article
• Authors: Chakraborty, Apurba; Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Biswas, Dhrubes
• Is Part Of: Semiconductor science and technology. Volume 33:Number 3(2018:Mar.)
• Publication Date: 2018-02-05
• Subjects: InGaN/GaN -- PA-CTMBE -- HRXRD -- metal modulation growth; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaa7cc
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this paper, we have demonstrated the growth process of higher Indium content indium gallium nitride (InGaN) epitaxial layer of InGaN/GaN/AlN/GaN heterostructure without any V-shaped pits formation on the growth surface. The epitaxial InGaN with In fraction of 16%, 22% and 26% has been grown by using metal modulation growth scheme. The direct growth of relaxed InGaN structures with In content of 16% and 22% on GaN/AlN/GaN periodic layer shows higher density of V-shaped pits on the surface, as the InGaN epilayer is experienced to higher lattice relaxation and threading dislocation density. But for the 26% In mole heterostructure, the V pits are mitigated by varying the Indium fraction from 16% to 26% via 22% in bottom to top direction of the structure. The FESEM images have also confirmed the absence of any pits formation in 26% In content InGaN heterostructure, which is due to the lesser lattice relaxation and threading dislocation density. The different contents of Indium are confirmed by room temperature photoluminescence and XRD measurements.