1. (Invited) Laser Thermal Annealing for Low Thermal Budget Applications: From Contact Formation to Material Modification. (23rd April 2019) Authors: Huet, Karim; Tabata, Toshiyuki; Aubin, Joris; Rozé, Fabien; Thuries, Louis; Halty, Sebastien; Curvers, Benoit; Mazzamuto, Fulvio; Liu, J.; Mori, Yoshihiro Journal: ECS transactions Issue: Volume 89:Number 3(2019) Page Start: 137 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe. (18th August 2016) Authors: Hartmann, Jean-Michel; Aubin, Joris; Barnes, Jean-Paul Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 281 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Atmospheric Pressure Selective Epitaxial Growth of Heavily in-situ Phosphorous-Doped Si(:C) Raised Sources and Drains. (18th August 2016) Authors: Hartmann, Jean-Michel; Aubin, Joris; Barraud, Sylvain; Samson, Marie-Pierre Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 361 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparative Analysis of Ni- and Ni0.9Pt0.1-Ge0.9Sn0.1 Solid-State Reaction by Combined Characterizations Methods. (20th July 2018) Authors: Quintero, Andrea; Gergaud, Patrice; Aubin, Joris; Hartmann, Jean-Michel; Chevalier, Nicolas; Reboud, Vincent; Cassan, Eric; Rodriguez, Philippe Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 299 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing. (20th July 2018) Authors: Dagault, Lea; Acosta-Alba, Pablo; Kerdilès, Sébastien; Barnes, Jean-Paul; Hartmann, Jean-Michel; Gergaud, Patrice; Nguyen, Than Tra; Grenier, Adeline; Aubin, Joris; Cristiano, Fuccio Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 29 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Experimental Calibration of Sn‐Related Varshni Parameters for High Sn Content GeSn Layers. Issue 6 (12th February 2019) Authors: Bertrand, Mathieu; Thai, Quang‐Minh; Chrétien, Jérémie; Pauc, Nicolas; Aubin, Joris; Milord, Laurent; Gassenq, Alban; Hartmann, Jean‐Michel; Chelnokov, Alexei; Calvo, Vincent; Reboud, Vincent Other Names: Ruffenach Sandra guestEditor.; Tchernycheva Maria guestEditor. Journal: Annalen der Physik Issue: Volume 531:Issue 6(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates. (7th November 2018) Authors: Khazaka, Rami; Nolot, Emmanuel; Aubin, Joris; Hartmann, Jean-Michel Journal: Semiconductor science and technology Issue: Volume 33:Number 12(2018:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows. (20th July 2018) Authors: Khazaka, Rami; Aubin, Joris; Nolot, Emmanuel; Hartmann, Jean-Michel Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 207 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Investigation of the Low Temperature / High Temperature Approach to Produce Si0.5Ge0.5 and Pure Ge Strain Relaxed Buffers. (18th August 2016) Authors: Hartmann, Jean-Michel; Aubin, Joris; Bogumilowicz, Yann; Delaye, Vincent; Papon, Anne-Marie Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 579 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers. (18th August 2016) Authors: Aubin, Joris; Hartmann, Jean-Michel; Barnes, Jean-Paul; Pin, Jean-Baptiste; Bauer, Matthias Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 387 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗