Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates. (7th November 2018)

• Record Type: Journal Article
• Authors: Khazaka, Rami; Nolot, Emmanuel; Aubin, Joris; Hartmann, Jean-Michel
• Is Part Of: Semiconductor science and technology. Volume 33:Number 12(2018:Dec.)
• Publication Date: 2018-11-07
• Subjects: epitaxy -- SiGeSn -- growth kinetics -- WDXRF; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaea32
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this contribution, we report on the growth of pseudomorphic SiGeSn layers on 2.5 μ m thick Ge virtual substrates on Si(001). A single wafer reduced pressure chemical vapor deposition reactor was used for the 100 Torr epitaxy of those layers, with digermane (Ge2 H6 ), tin-tetrachloride (SnCl4 ) and disilane (Si2 H6 ) as precursors. Detailed analyses regarding the growth kinetics, layer composition and surface morphology as function of the growth temperature and Si2 H6 flow are presented. As the temperature increases we have, for the same precursor flows, a Si content increase and a Sn content decrease. The activation energy associated with the exponential increase of the SiGeSn growth rate with the temperature, 9.5 kCal.mol −1, is close to that of GeSn (10.6 kCal.mol −1 ). Furthermore, we show that the addition of Si2 H6 to the gaseous mixture results (besides the expected Si content increase) in a Sn content increase and a Ge content decrease. This study yields a better understanding of the growth of SiGeSn compound semiconductors.