Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows. (20th July 2018)

• Record Type: Journal Article
• Authors: Khazaka, Rami; Aubin, Joris; Nolot, Emmanuel; Hartmann, Jean-Michel
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 207
• Page End: 218
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0207ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We have quantified the impact of various process parameters on the growth of thin, pseudomorphic Siy Ge1-x-y Snx layers on 2.5 µm Ge buffers (themselves on Si(001) substrates). For GeSn layers, we found that 100 Torr was appropriate for the growth of high crystalline quality layers. The impact of the HCl mass-flow on the growth kinetics of thin Ge1-x Snx layers was also evaluated. Adding HCl retained Ge in the gaseous phase, resulting at 325°C in a growth rate decrease and a Sn content increase. Moreover, the growth of Ge1-x Snx was shown to be selective against SiO2 and SiN-covered Si substrates, even without HCl. Finally, various Si2 H6 flows were added to the gas mixture to grow pseudomorphic SiGeSn layers. The quality of these layers was assessed by X-ray diffraction (XRD), wavelength dispersive X-ray fluorescence (WDXRF) and atomic force microscopy (AFM).