Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing. (20th July 2018)

• Record Type: Journal Article
• Authors: Dagault, Lea; Acosta-Alba, Pablo; Kerdilès, Sébastien; Barnes, Jean-Paul; Hartmann, Jean-Michel; Gergaud, Patrice; Nguyen, Than Tra; Grenier, Adeline; Aubin, Joris; Cristiano, Fuccio
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 29
• Page End: 39
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0029ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Ultraviolet Nanosecond Laser Annealing (UV-NLA, XeCl laser, 308 nm, 145 ns) was performed on 30 nm-thick Si0.8 Ge0.2 epitaxial layers. The various regimes encountered after single pulse UV-NLA are described and discussed, including submelt, SiGe layer partial and total melt, as well as melt beyond the SiGe epi-layer. Energy densities around 2.00 J/cm² and above led to the formation of pseudomorphic layers with strong Ge redistribution. Starting from uniform Si0.8 Ge0.2 layers, Ge segregation towards the surface resulted in the formation of a Ge-rich surface layer with up to 55% Ge for 2.00 J/cm². Such pseudomorphic SiGe layers with graded composition and a Ge-rich surface layer may find some promising applications such as contact resistance lowering in doped layers.