1. A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements. (April 2015) Authors: Bilkan, Ç.; Zeyrek, S.; San, S.E.; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 32(2015:Apr.) Page Start: 137 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions. (1st August 2016) Authors: Çiçek, O.; Tecimer, H. Uslu; Tan, S.O.; Tecimer, H.; Altındal, Ş.; Uslu, İ. Journal: Composites Issue: Volume 98(2016) Page Start: 260 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure. (1st November 2018) Authors: Nezhadesm-Kohardafchahi, S.; Farjami-Shayesteh, S.; Badali, Y.; Altındal, Ş.; Jamshidi-Ghozlu, M.A.; Azizian-Kalandaragh, Y. Journal: Materials science in semiconductor processing Issue: Volume 86(2018) Page Start: 173 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs). (January 2019) Authors: Güçlü, Ç.Ş.; Özdemir, A.F.; Karabulut, A.; Kökce, A.; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 89(2019) Page Start: 26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340 K. (March 2015) Authors: Marıl, E.; Kaya, A.; Koçyiğit, S.; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 31(2015:Mar.) Page Start: 256 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures. (2019) Authors: Yükseltürk, E.; Çotuk, M.; Bülbül, M.M.; Altındal, Ş.; Zeyrek, S. Journal: Materials today Issue: Volume 18:Part 5(2019) Page Start: 1852 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. (November 2015) Authors: Marıl, E.; Kaya, A.; Çetinkaya, H.G.; Koçyiğit, S.; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 39(2015:Nov.) Page Start: 332 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures. (15th March 2017) Authors: Çiçek, O.; Uslu Tecimer, H.; Tan, S.O.; Tecimer, H.; Orak, İ.; Altındal, Ş. Journal: Composites Issue: Number 113(2017) Page Start: 14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature. (May 2015) Authors: Demirezen, S.; Kaya, A.; Vural, Ö.; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 33(2015:May) Page Start: 140 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements. (October 2018) Authors: Al-Dharob, M. Hussein; Lapa, H. Elif; Kökce, A.; Özdemir, A. Faruk; Aldemir, D. Ali; Altındal, Ş. Journal: Materials science in semiconductor processing Issue: Volume 85(2018) Page Start: 98 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗