On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340 K. (March 2015)

• Record Type: Journal Article
• Authors: Marıl, E.; Kaya, A.; Koçyiğit, S.; Altındal, Ş.
• Is Part Of: Materials science in semiconductor processing. Volume 31(2015:Mar.)
• Page Start: 256
• Page End: 261
• Publication Date: 2015-03
• Subjects: Au/n-Si (MS) structures -- (Ca3Co4Ga0.001Ox) interfacial layer -- Temperature dependent leakage current–voltage (Ir–Vr) -- Frenkel–Poole and Schottky emission; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2014.12.005
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The temperature dependent reverse bias leakage current–voltage ( I r – V r ) of the Au/Ca3 Co4 Ga0.001 O x /n-Si structure has been investigated in the temperature range of 80–340 K. The Ln( J r / E r ) vs E 0.5 plots show straight lines with different slopes in the intermediate reverse bias voltages for each temperature. Both the intercepts B ( T ) and slopes m ( T ) values were obtained from these plots for each temperature. Their values vs q / kT plots were drawn and they show a linear behavior except for two low temperatures (80 and 120 K). The dielectric constant ( ε s ) of interfacial Ca3 Co4 Ga0.001 O x layer and the barrier height ( ϕ t ) which is necessary electron emission from the trap values were found from the slope of these plots, respectively. Experimental results show that the I r – V r characteristics can be well described by the electric field dependence so the dominant conduction mechanisms are either Frenkel–Poole emission (FPE) or Schottky emission (SE) in this structure. The ε s and ϕ t values were found as 3.1 and 37.1 meV, respectively. It is clear that the value of ϕ t is considerably low and the value of dielectric constant (3.1) is closed to the dielectric value conventional of SiO2 insulator layer. These results confirmed that the (Ca3 Co4 Ga0.001 O x ) interfacial layer can be used instead of a conventional of SiO2 insulator layer in the terms of flexibility, easy production and low cost.