The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature. (May 2015)

• Record Type: Journal Article
• Authors: Demirezen, S.; Kaya, A.; Vural, Ö.; Altındal, Ş.
• Is Part Of: Materials science in semiconductor processing. Volume 33(2015:May)
• Page Start: 140
• Page End: 148
• Publication Date: 2015-05
• Subjects: Mo-doped (PVC+TCNQ) interfacial layer -- Energy density distribution profile of interface states -- Effect of Mo-doping on electrical characteristics -- Schottky barrier diodes (SBDs); Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.01.050
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current–voltage ( I – V ), capacitance–voltage ( C – V ) and conductance–voltage ( G / ω – V ) measurements at room temperature. The energy dependent interface states density ( N ss ) was obtained from the forward bias I–V data by taking into account voltage dependent effective barrier height ( Φ e ) for two diodes, i.e. with and without Mo doping. The voltage dependent resistance ( R i ) of structures was also obtained using Ohm׳s law and the method of Nicollian and Brews for the diodes. In order to eliminate the effect of series resistance ( R s ), C and G / ω at high frequency values were corrected. N ss and R s values were compared between the diodes and experimental results showed that N ss and R s values of the Mo-doped PVC+TCNQ structure are considerably lower than those of the undoped PVC+TCNQ structure. The other important parameters such as ideality factor ( n ), reverse saturation current ( I s ), zero-bias barrier heights ( Φ Bo ) and R s were obtained from forward bias I – V data by using I – V, Cheung and Norde methods. Experimental results confirmed that the Mo-doped (PVC+TCNQ) layer considerably improved the performance of the Au/PVC+TCNQ/p-Si structure.