On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. (November 2015)

• Record Type: Journal Article
• Authors: Marıl, E.; Kaya, A.; Çetinkaya, H.G.; Koçyiğit, S.; Altındal, Ş.
• Is Part Of: Materials science in semiconductor processing. Volume 39(2015:Nov.)
• Page Start: 332
• Page End: 338
• Publication Date: 2015-11
• Subjects: Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure -- Barrier inhomogeneity -- Temperature dependent -- Gaussian distribution (GD); Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.05.029
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In order to good interpret of temperature dependent main electrical parameters in Au/2% graphene–cobalt (GC) doped (Ca3 Co4 Ga0.001 O x )/n-Si structure, forward bias current–voltage ( I – V ) characteristics have been investigated in the temperature range of 80–340 K. The possible current-conduction mechanisms (CCMs) in this structure was also investigate in detail. The ideality factor ( n ), reverse saturation current ( I o ), and zero-bias barrier height ( Φ Bo ) values were found as 14.5, 7.2×10 −6 A, 0.141 eV at 80 K and 3.18, 1.7×10 −3 A, and 0.526 eV at 340 K, respectively. It is clear that both the value of n and Φ Bo are strong function of temperature. While the value of n decreases with increasing temperature, Φ Bo increases. In order to explain such behavior of BH the Φ Bo and n, Φ Bo vs q /2 kT, Φ Bo vs n, and ( n −1 −1) vs q /2 kT plots were drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and it shows a straight line. The mean value of BH ( Φ ¯ Bo ) and standard deviation ( σ s ) were found from the slope and intercept of this plot as 0.614 eV and 0.088 V, respectively. By using the modified Richardson plot, the Φ ¯ Bo and Richardson constant ( A *) values were obtained from the slope and intercept of this plot as 0.604 eV and 108.23 A cm −2 K −2, respectively. It is clear that this value of A * (=108.23 A cm −2 K −2 ) is very close to the theoretical value 112 A cm −2 K −2 for n-Si. In conclusion, the temperature dependence of the forward bias I – V characteristics of the structure can be successfully explained on the basis of a thermionic emission (TE) mechanism with GD of the BHs.