1. 450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers. (23rd May 2019) Authors: Arakawa, Kei; Miyoshi, Kohei; Iida, Ryosuke; Kato, Yuki; Takeuchi, Tetsuya; Miyoshi, Makoto; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A GaN‐Based VCSEL with a Convex Structure for Optical Guiding. Issue 10 (20th February 2018) Authors: Hayashi, Natsumi; Ogimoto, Junichiro; Matsui, Kenjo; Furuta, Takashi; Akagi, Takanobu; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu Other Names: Scholz Ferdinand guestEditor.; Schwarz Ulrich guestEditor.; Vescan Andrei guestEditor.; Wernicke Tim guestEditor. Journal: Physica status solidi Issue: Volume 215:Issue 10(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Advantages of the moth‐eye patterned sapphire substrate for the high performance nitride based LEDs. Issue 3 (19th March 2014) Authors: Kondo, Toshiyuki; Kitano, Tsukasa; Suzuki, Atsushi; Mori, Midori; Naniwae, Koichi; Kamiyama, Satoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Akasaki, Isamu Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 771 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate. (27th April 2021) Authors: Tanaka, Shunya; Teramura, Shohei; Shimokawa, Moe; Yamada, Kazuki; Omori, Tomoya; Iwayama, Sho; Sato, Kosuke; Miyake, Hideto; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Applied physics express Issue: Volume 14:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length. (14th June 2021) Authors: Sato, Kosuke; Omori, Tomoya; Yamada, Kazuki; Tanaka, Shunya; Ishizuka, Sayaka; Teramura, Shohei; Iwayama, Sho; Iwaya, Motoaki; Miyake, Hideto; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 60:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire. (22nd December 2021) Authors: Sone, Naoki; Jinno, Daiki; Miyamoto, Yoshiya; Okuda, Renji; Yamamura, Shiori; Jinno, Yukimi; Lu, Weifang; Han, Dong-Pyo; Okuno, Koji; Mizutani, Koichi; Nakajima, Satoru; Koyama, Jun; Ishimura, Satoshi; Mayama, Norihito; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 61:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers. Issue 14 (24th January 2020) Authors: Sato, Kosuke; Yasue, Shinji; Ogino, Yuya; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Other Names: Ivanov Sergey guestEditor.; Shubina Tatiana guestEditor.; Jmerik Valentin guestEditor.; Gil Bernard guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 14(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth. Issue 3 (30th January 2013) Authors: Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko; Sugiyama, Toru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Physica status solidi Issue: Volume 7:Issue 3(2013:Mar.) Page Start: 211 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality. Issue 8 (17th July 2017) Authors: Jinno, Daiki; Otsuki, Shunya; Niimi, Teruyuki; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Physica status solidi Issue: Volume 254:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching. (14th December 2020) Authors: Iida, Ryosuke; Ueshima, Yusuke; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu; Kuramoto, Masaru; Kamei, Toshihiro Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗