Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth. Issue 3 (30th January 2013)

• Record Type: Journal Article
• Authors: Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko; Sugiyama, Toru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
• Is Part Of: Physica status solidi. Volume 7:Issue 3(2013:Mar.)
• Page Start: 211
• Page End: 214
• Publication Date: 2013-01-30
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307023
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Strain relaxation in a GaInN/GaN heterostructure is analyzed by combining <italic>in situ</italic> X‐ray diffraction (XRD) monitoring and <italic>ex situ</italic> observations. Two different characteristic thicknesses of GaInN films are defined by the evolution of <italic>in situ</italic> XRD from the full width at half‐maximum of symmetric (0002) diffraction as a function of GaInN thickness. This <italic>in situ</italic> XRD measurement enables to clearly observe the critical thicknesses corresponding to strain relaxation in the GaInN/GaN heterostructure caused by the formation of surface pits with bent threading dislocations and the generation of misfit dislocations on GaInN during growth. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>