450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers. (23rd May 2019)

• Record Type: Journal Article
• Authors: Arakawa, Kei; Miyoshi, Kohei; Iida, Ryosuke; Kato, Yuki; Takeuchi, Tetsuya; Miyoshi, Makoto; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SC(2019)
• Publication Date: 2019-05-23
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab12ca
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigated and improved optical waveguides along the vertical and horizontal directions in 450 nm GaInN laser diodes. As a result, we demonstrated a low threshold current density (1.15 kA cm −2 ) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82 In0.18 N/25 nm Al0.03 Ga0.97 N multiple bottom cladding layer at room temperature under pulsed condition. This threshold current density is smaller than our typical value with a 1 μ m Al0.03 Ga0.97 N bottom cladding layer. AlInN/AlGaN multiple layers are useful as n-type cladding layers in visible laser diodes to achieve higher optical confinement factors while smooth surfaces were obtained.