Annealing of the sputtered AlN buffer layer on r‐plane sapphire and its effect on a‐plane GaN crystalline quality. Issue 8 (17th July 2017)

• Record Type: Journal Article
• Authors: Jinno, Daiki; Otsuki, Shunya; Niimi, Teruyuki; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
• Is Part Of: Physica status solidi. Volume 254:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-07-17
• Subjects: AlN -- annealing -- buffer layers -- GaN -- nonpolar surfaces -- sputtering; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201600723
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : We demonstrated how annealing of the sputtered AlN buffer layer (sp‐AlN) on r ‐plane sapphire could be used to produce a high‐crystalline‐quality a ‐plane GaN ( a ‐GaN). The sp‐AlN with large grains was confirmed by annealing at 1600 °C in N2 ambient, consequently its crystalline orientation and quality were significantly improved. Moreover, it was found that a ‐GaN grown on annealed sp‐AlN showed better crystalline quality, including a reduction of basal stacking fault density, than a ‐GaN grown on untreated sp‐AlN (as sputtered). The implication is that the a ‐GaN growth method using annealed sp‐AlN is an effective way to obtain high crystalline quality.