Cite
MLA Citation
Fuping Huang et al.. “GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect.” Applied physics express, vol. 15, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100159470986.0x00000b