GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. (1st August 2022)

• Record Type: Journal Article
• Authors: Huang, Fuping; Chu, Chunshuang; Wang, Zhizhong; Zhang, Yonghui; Ye, Jiandong; Lv, Yuanjie; Gong, Hehe; Li, Yongjian; Zhang, Zi-Hui; Gu, Shulin; Zhang, Rong
• Is Part Of: Applied physics express. Volume 15:Number 8(2022)
• Publication Date: 2022-08-01
• Subjects: gallium nitride -- quasi-vertical Schottky barrier diodes -- p-type NiO -- field plates -- power devices; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac7eac
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report a GaN-based Schottky barrier diode with a p-NiO field ring and field plate. It shows a low turn-on voltage ( V ON ) of ∼0.6 V, an On-resistance ( R ON ) of ∼6.5 mΩ·cm 2, a nearly unity ideality factor of 1.13 at V F = 0.3 V, and a high on/off current ratio of ∼10 10 . The breakdown voltage (BV) is increased from 300 to 1100 V, rendering a relatively high Baliga's power figure-of-merit of ∼0.2 GW cm −2 . The improved performance is attributed to the improved current spreading effect and the suppressed field crowding effect via the implemented p-NiO.