Cite

    Huang, F., Chu, C., Wang, Z., Zhang, Y., Ye, J., Lv, Y., Gong, H., Li, Y., Zhang, Z., Gu, S., & Zhang, R. (2022). gaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. Applied physics express, 15, . http://access.bl.uk/ark:/81055/vdc_100159470986.0x00000b