Cite
HARVARD Citation
Huang, F. et al. (2022). GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. Applied physics express. p. . [Online].
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Huang, F. et al. (2022). GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. Applied physics express. p. . [Online].