Cite
MLA Citation
Christophe Batard et al.. “Design of a gate driver for SiC MOSFET module for applications up to 1200 V.” IET power electronics, vol. 13, no. 7, 2020, pp. 1364–1373. http://access.bl.uk/ark:/81055/vdc_100124770960.0x000012
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Christophe Batard et al.. “Design of a gate driver for SiC MOSFET module for applications up to 1200 V.” IET power electronics, vol. 13, no. 7, 2020, pp. 1364–1373. http://access.bl.uk/ark:/81055/vdc_100124770960.0x000012