Design of a gate driver for SiC MOSFET module for applications up to 1200 V. Issue 7 (1st May 2020)

• Record Type: Journal Article
• Authors: Batard, Christophe; Ginot, Nicolas; Bouguet, Christophe
• Is Part Of: IET power electronics. Volume 13:Issue 7(2020)
• Page Start: 1364
• Page End: 1373
• Publication Date: 2020-05-01
• Subjects: driver circuits -- wide band gap semiconductors -- elemental semiconductors -- field effect transistor switches -- power electronics -- power MOSFET -- silicon -- silicon compounds -- insulated gate bipolar transistors; SiC MOSFET module -- silicon carbide metal‐oxide‐semiconductor field‐effect transistors -- power electronic converters -- SiC MOSFET transistors -- switching cell integrity -- power supply structure -- gate driver -- galvanic isolation -- control signals -- power supplies -- short circuit detection -- SiC -- Si; Power electronics -- Periodicals; 621.31705
• DOI: 10.1049/iet-pel.2019.0422
• Languages: English
• ISSNs: 1755-4535

Abstract

Abstract : Nowadays new silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are available in the market and they are expected to replace, in the next few years, the insulated gate bipolar transistor (IGBT) and Si‐MOSFET in power electronic converters. SiC MOSFET transistors must be controlled by a dedicated circuit called 'gate driver' which ensures the switching orders transmission, the users' safety and the switching cell integrity. The design of a gate driver dedicated to a SiC MOSFET module for applications up to 1200 V is described in this study. Galvanic isolation of control signals and power supplies, the power supply structure, SiC MOSFET switching orders and protection functions are detailed. Essential functions such as the short circuit detection and the implementation of the soft shut down are expanded. The developed gate driver is tested and validated. Experimental measurements allow for the validation of the good functioning of the developed gate driver in a highly disturbed environment.