Cite
APA Citation
Batard, C., Ginot, N., & Bouguet, C. (2020). design of a gate driver for SiC MOSFET module for applications up to 1200 V. IET power electronics, 13(7), 1364–1373. http://access.bl.uk/ark:/81055/vdc_100124770960.0x000012
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Batard, C., Ginot, N., & Bouguet, C. (2020). design of a gate driver for SiC MOSFET module for applications up to 1200 V. IET power electronics, 13(7), 1364–1373. http://access.bl.uk/ark:/81055/vdc_100124770960.0x000012