Cite
HARVARD Citation
Batard, C. et al. (2020). Design of a gate driver for SiC MOSFET module for applications up to 1200 V. IET power electronics. 13 (7), pp. 1364-1373. [Online].
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Batard, C. et al. (2020). Design of a gate driver for SiC MOSFET module for applications up to 1200 V. IET power electronics. 13 (7), pp. 1364-1373. [Online].