Cite
MLA Citation
Zhihua Dong et al.. “5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing.” Electronics letters, vol. 49, no. 3, 2013, pp. 221–222. http://access.bl.uk/ark:/81055/vdc_100124386211.0x000035