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APA Citation
Dong, Z., Tan, S., Cai, Y., Chen, H., Liu, S., Xu, J., Xue, L., Yu, G., Wang, Y., Zhao, D., Hou, K., Chen, K. J., & Zhang, B. (2013). 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Electronics letters, 49(3), 221–222. http://access.bl.uk/ark:/81055/vdc_100124386211.0x000035