Cite
HARVARD Citation
Dong, Z. et al. (2013). 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Electronics letters. 49 (3), pp. 221-222. [Online].
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Dong, Z. et al. (2013). 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing. Electronics letters. 49 (3), pp. 221-222. [Online].