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MLA Citation
Ru Xu et al.. “2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure.” Solid-state electronics, vol. 175, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100120455625.0x000056
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Ru Xu et al.. “2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure.” Solid-state electronics, vol. 175, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100120455625.0x000056