Cite
APA Citation
Xu, R., Chen, P., Liu, M., Zhou, J., Li, Y., Liu, B., Chen, D., Xie, Z., Zhang, R., & Zheng, Y. (2021). 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure. Solid-state electronics, 175, . http://access.bl.uk/ark:/81055/vdc_100120455625.0x000056