2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure. (January 2021)

• Record Type: Journal Article
• Authors: Xu, Ru; Chen, Peng; Liu, Menghan; Zhou, Jing; Li, Yimeng; Liu, Bin; Chen, Dunjun; Xie, Zili; Zhang, Rong; Zheng, Youdou
• Is Part Of: Solid-state electronics. Volume 175(2021)
• Publication Date: 2021-01
• Subjects: AlGaN/GaN lateral Schottky barrier diode -- Optimized rapid etch process -- Physical breakdown voltage; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107953
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The rapid etch process results in improving etching quality with a 0.26-nm roughness of the anode recess surface. Proper post-modification is essential to the device performance. With the optimized process, 2.7-kV AlGaN/GaN Schottky barrier diode on silicon were fabricated. Abstract: In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low turn-on voltage of 0.71 V is obtained with a high uniformity of ±0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode–cathode spacing of 15 μm show the specific on-resistance ( Ron, sp ) of 1.53 mΩ·cm 2 only, the physical breakdown voltage can reach 1678 V with a high power figure-of-merit (P-FOM) of 1840 MW/cm 2 . For the SBD device with the anode–cathode spacing of 30 μm, the physical breakdown voltage can be as high as 2705 V and the power FOM is 2217 MW/cm 2 .