Cite
HARVARD Citation
Xu, R. et al. (2021). 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure. Solid-state electronics. p. . [Online].
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Xu, R. et al. (2021). 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure. Solid-state electronics. p. . [Online].